View HSCH-5314_201254.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Beam Lead Schottky Diodes for Mixers and Detectors (1- 26 GHz) Technical Data
HSCH-5300 Series
Features
* Platinum Tri-Metal System High Temperature Stability * Silicon Nitride Passivation Stable, Reliable Performance * Low Noise Figure Guaranteed 7.5 dB at 26 GHz * High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics * Rugged Construction 4 Grams Minimum Lead Pull * Low Capacitance 0.10 pF Max. at 0 V * Polyimide Scratch Protection
Outline 07
CATHODE 130 (5) 100 (4) GOLD LEADS 135 (5) 90 (3) 135 (5) 90 (3) 225 (9) 200 (8) 310 (12) 250 (10) 225 (9) 170 (7)
12 (.5) 8 (.3) 30 MIN (1)
Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.
SILICON
710 (28) 670 (26)
GLASS 60 (2) 40 (1)
DIMENSIONS IN m (1/1000 inch)
Maximum Ratings
Pulse Power Incident at TA = 25C .......................................................... 1 W Pulse Width = 1 s, Du = 0.001 CW Power Dissipation at TA = 25C ................................................ 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature TOPR - Operating Temperature Range ...............................-65C to +175 C TSTG - Storage Temperature Range ....................................-65C to +200C Minimum Lead Strength ........................................ 4 grams pull on any lead Diode Mounting Temperature ............................... +350C for 10 sec. max. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode.
2
Applications
The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band. The basic medium barrier devices in this family are DC tested HSCH-5310, -5312, and -5316. A batch matched version is available as the HSCH-5317. Equivalent low barrier devices are HSCH-5330, -5332, and -5336. Batch matched
versions are available as HSCH-5331 and -5333. For applications requiring guaranteed RF-tested performance up to 26 GHz, the HSCH-5340 is selected with batch match units available as the HSCH-5341. The HSCH-5318 is selected for 6.2 dB maximum noise figure at 9.375 GHz; with RF batch match units available as the HSCH-5319. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 16 GHz with RF batch match units available as the HSCH-5315.
Assembly Techniques
Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, "The Handling and Bonding of Beam Lead Devices Made Easy," or Application Note 993, "Beam Lead Device Bonding to Soft Substrates."
Table IA. Electrical Specifications for RF Tested Diodes at TA = 25C
Part Number HSCH5318 5314 5340 Test Conditions Batch* Matched HSCH5319 5315 5341 NF 0.3 dB ZIF 25 Low Max. Noise Figure NF (dB) 6.2 at 9.375 GHz 7.2 at 16 GHz 7.5 at 26 GHz 150 350 1.5:1 4 IR 10 A IF Impedance ZIF () Min. Max. 200 400 Max. SWR 1.5:1 Min. Breakdown Voltage VBR (V) 4 Max. Dynamic Resistance RD () 12 16 20 IF = 5 mA Max. Total Capacitance CT (pF) 0.25 0.15 0.10 VR = 0 V f = 1 MHz 375 IF = 1 mA 400 VR = 1 V Max. Forward Voltage V (mV) F 500 Max. Leakage Current IR (nA) 100
Barrier Medium
DC Load Resistance - 0 LO Power = 1 mW IF = 30 MHz, 1.5 dB NF
*Minimum batch size 20 units. Note: 1. CT = CJ + 0.02 pF (fringing cap).
3
Table IB. Electrical Specifications for DC Tested Diodes at TA = 25C
Part Number HSCH5316 5312 5310 5336 5332 5330 Test Conditions Batch* Matched HSCH5317 Minimum Breakdown Voltage VBR (V) 4 Maximum Dynamic Resistance RD () 12 16 20 12 16 20 IF = 5 mA Maximum Total Capacitance CT (pF) 0.25 0.15 0.10 0.25 0.15 0.10 V =0V R f = 1 MHz Maximum Forward Voltage VF (mV) 500 Maximum Leakage Current IR (nA) 100
Barrier Medium
Low 5333 5331 VF 15 mV @ 5 mA
4
375
400
IR 10 A
IF = 1 mA
VR = 1 V
*Minimum batch size 20 units.
Typical Detector Characteristics at TA = 25C
Medium Barrier and Low Barrier (DC Bias) Parameter Tangential Sensitivity Voltage Sensitivity Video Resistance Symbol TSS RV Typical Value -54 6.6 1400 Units dBm mV/W Test Conditions 20 A Bias, RL = 100 K Video Bandwidth = 2 MHz f = 10 GHz
Low Barrier (Zero Bias) Parameter Tangential Sensitivity Voltage Sensitivity Video Resistance Symbol TSS RV Typical Value -44 10 1.8 Units dBm mV/W M Test Conditions Zero Bias, RL = 10 M Video Bandwidth = 2 MHz f = 10 GHz
SPICE Parameters
HSCH-5316 HSCH-5312 Parameter Units HSCH-5318 HSCH-5314 BV CJ0 EG IBV IS N RS PB PT M V pF eV A A V 5 0.2 0.69 10E - 5 3 x 10E - 10 1.08 5 0.65 2 0.5 5 0.13 0.69 10E - 5 3 x 10E - 10 1.08 9 0.65 2 0.5 HSCH-5330 HSCH-5310 HSCH-5340 HSCH-5332 HSCH-5336 5 0.09 0.69 10E - 5 3 x 10E - 10 1.08 13 0.65 2 0.5 5 0.09 0.69 10E - 5 4 x 10E - 10 1.08 13 0.5 2 0.5 5 0.13 0.69 10E - 5 4 x 10E - 8 1.08 9 0.5 2 0.5 5 0.20 0.69 10E-5 4 x 10E-8 1.08 6 0.5 2 0.5
4
Typical Parameters
100
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
+125C +25C -55C
100
+125C +25C -55C
7.5
NOISE FIGURE (dB)
10
10
7.0 0.1 pF 6.5 0.15 pF 6.0 0.25 pF 5.5
1
1
0.1
0.1
0.01
0.01
5.0
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
0
2
4
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
8 12 16 20 9.375 FREQUENCY (GHz)
24
26
28
Figure 1. Typical Forward Characteristics for Medium Barrier Beam Lead Diodes. HSCH-5310 Series.
Figure 2. Typical Forward Characteristics for Low Barrier Beam Lead Diodes. HSCH-5330, -5340 Series.
Figure 3. Typical Noise Figure vs. Frequency.
1.0
1.0
0.
2.0
18 10
20 A 50 A 20 10 150 A 26 GHz
1.0 2.0
2.0
3.
5. 0
.0 10
3.
0
0.2
26 GHz
5.
0
.0
0.2
0.2
0.5
2
0.2 0.5 1.0 2.0 3.0 5.0
10
.0
10
5
5
2.0
Figure 4. Typical Admittance Characteristics with 1 mA Self Bias. HSCH-5340 and -5341.
1.0
Figure 5. Typical Admittance Characteristics with External Bias. HSCH-5340 and -5341.
1.0
2.0
0.
0.
5.
0
3.
0
5.
0
0.2
0.2
10
10.0 .0
3.0
10.0
5.0
2
0
3.
0
0. 5
5
5
0.2
1 mA 1.5 mA 3 mA 18 GHz 10
3. 0
5.
0
.0
0.2
10
5. 0
.0 10
10
0.2
0.5
1.0
2.0
10.0 .0 10
5
5
2.0
1.0
Figure 6. Typical Admittance Characteristics with Self Bias. HSCH-5314 and -5315.
Figure 7. Typical Admittance Characteristics with External Bias. HSCH-5314 and -5315.
0.2
12 GHz 1 mA 1.5 mA 3 mA
0
3.
5.
0
.0
0.2
6
5. 0
.0 10
2
0.2 0.5 1.0 2.0 3.0 5.0
10
2
0.2 0.5 1.0 2.0 3.0 5.0
10.0 .0
3.
10
0
2.0
20 A 50 A 150 A 12 GHz
1.0
1.0
2.0
1.0
2.0
2.0
0.
0.
5
2.0
0.
1.0
0.
5
Figure 8. Typical Admittance Characteristics with Self Bias. HSCH-5318 and -5319.
Figure 9. Typical Admittance Characteristics with External Bias. HSCH-5318 and -5319.
Models for Each Beam Lead Schottky Diode
HSCH-5340, -5341 1 mA Self Bias
0.03 pF
0.1 nH 11
0.04 nH 267
0.11 pF
1.0
5.
0
3.
0
5.
0
0.2
0.2
10
10.0 .0
5.
0
3.
0
5.
0
0.2
0.2
10
10.0 .0
0.2
0.5
1.0
2.0
3.0
3.0
3.
3.
0
5.0
5.0
2
2
3. 0
20 A 50 A 150 A 18 GHz
1.0
1.0
5 0.
2.0
2.0
0
5 0.
0. 5
0. 5
Other HSCH-53XX Self Bias
0.02 pF
0.1 nH
Rs
Rj Cj
1.0 mA Self Bias Part Numbers HSCH-5314, -5315 HSCH-5318, -5319 RS () 5.0 5.1 Rj () 393 244 Cj (pF) 0.11 0.16 5.2 5.0
1.5 mA Self Bias RS () Rj () 232 178 Cj (pF) 0.11 0.16 5.0 5.0
3.0 mA Self Bias RS () Rj () 150 109 Cj (pF) 0.12 0.19
HSCH-5340, -5341 External Bias
0.03 pF
0.1 nH 11
0.04 nH
Rj
Cj
20 A DC Bias Part Numbers HSCH-5340, -5341 Rj () 1300 Cj (pF) 0.09
50 A DC Bias Rj () 560 Cj (pF) 0.09
150 A DC Bias Rj () 187 Cj (pF) 0.10
Other HSCH-53XX External Bias
0.02 pF 0.1 nH
Rs Rj Cj
20 ADC Bias Part Numbers HSCH-5314, -5315 HSCH-5318, -5319 RS () 2.8 5.1 Rj () Cj (pF) 1300 1300 0.11 0.18 4.7 3.9
50 ADC Bias RS () Rj () 520 520 Cj (pF) 0.12 0.19 2.7 4.7
150 ADC Bias RS () Rj () 180 180 Cj (pF) 0.13 0.20
www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies 5965-8849E (11/99)

▲Up To Search▲

Price & Availability of HSCH-5314

	To Download HSCH-5314 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .